Analysis on the Characteristics of Transient Signal Transmission Based on GaAs Materials

Wei Liu; Tian Lan

doi:10.4028/www.scientific.net/MSF.663-665.502

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Analysis on the Characteristics of Transient...

Analysis on the Characteristics of Transient Signal Transmission Based on GaAs Materials

Abstract:

The GaAs photoconductive switch is an important device in the measurement of the signal of ultra high-speed. In this paper, the transmission model of transient signals on GaAs photoconductive material is given, and the experimental system of near-field detection is set up. It is gotten that the full width half magnitude of signal is about 2ps. Based on the testing result of delay-time-modulation method, the relationship between signal amplitude and the form of connection mode is analyzed and discussed. It is shown that the coupling of capacity is important to acquire the transient signal.

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Materials Science Forum (Volumes 663-665)

Pages:

502-505

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.502

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Online since:

November 2010

Authors:

Wei Liu, Tian Lan

Keywords:

GaAs Semiconductor, Photoconductive Switch, Time Resolution, Transmission Model, Ultra Fast

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References

[1] S. Weiss, D.F. Ogletree, D. Botikin, M. Salmeron and D.S. Chemla: J. Appl. Phys. Vol. 63 (1993), p.2567.

Google Scholar

[2] N.N. Khusnatdinov, T. J. Nagle and G. Nunes: Appl. Phys. Lett. Vol. 77 (2000), p.4434.

Google Scholar

[3] Osamu Takeuchi, Masahiro Aoyama, Hiroyuki Kondo, Atsushi Taninaka, Yasuhiko Terada and Hidemi Shigekawa: Japanese. J. Appl. Phys. Vol. 45 (2006), p. (1926).

DOI: 10.1143/jjap.45.1926

Google Scholar

[4] Yasuhiko Terada, Masahiro Aoyama, Hiroyuki Kondo, Atsushi Taninaka, Osamu Takeuchi and Hidemi Shigekawa: Nanotechnology. Vol. 18 (2007), p.1.

Google Scholar

[5] Wei Shi and Li-qiang Tian: Chinese Journal of Semiconductor. Vol. 25 (2004), p.691.

Google Scholar

[6] Hong Liu, Chengli Ruan: ACTA 0PTICA SINICA. Vol. 29 (2009), p.496.

Google Scholar

[7] Kanglin Wang and Daniel M, Mittleman: Nature. Vol. 432 (2004), p.376.

Google Scholar

[8] Kanglin Wang, Adrian Barkan and Daniel M, Mittleman: Appl. Phys. Lett. Vol. 84 (2004), p.305.

Google Scholar

[9] Guo-you Ma, Tian Lan and Yin-chao Zhang: CHINESE JOURNAL OF LASERS. Vol. 36 (2009), p.73.

Google Scholar