Hanle Effect in Semiconductor with Weak Spin-Orbit Coupling

Abstract:

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A theoretical model to study Hanle effect for materials with weak spin-orbit coupling is developed. It considers the contributions from not only the drift current but also the diffusion part, which pronouncedly enlarges the application scope of the model. The spin lifetime in spin drift diffusion equation is also corrected by considering the thermal effect and the influence of external electrical field.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

978-981

DOI:

10.4028/www.scientific.net/MSF.663-665.978

Citation:

Y. L. Mi et al., "Hanle Effect in Semiconductor with Weak Spin-Orbit Coupling", Materials Science Forum, Vols. 663-665, pp. 978-981, 2011

Online since:

November 2010

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Price:

$35.00

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