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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Hanle Effect in Semiconductor with Weak Spin-Orbit...

Hanle Effect in Semiconductor with Weak Spin-Orbit Coupling

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Abstract:

A theoretical model to study Hanle effect for materials with weak spin-orbit coupling is developed. It considers the contributions from not only the drift current but also the diffusion part, which pronouncedly enlarges the application scope of the model. The spin lifetime in spin drift diffusion equation is also corrected by considering the thermal effect and the influence of external electrical field.

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Periodical:

Materials Science Forum (Volumes 663-665)

Pages:

978-981

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.978

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Online since:

November 2010

Authors:

Yi Lin Mi, Xiao Qing Zhao, Lan Wang

Keywords:

Hanle Effect, Spin Dephasing, Spin Precession

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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