Electron and Positron Densities for Mono Vacancy in SiC

Anna Rubaszek

doi:10.4028/www.scientific.net/MSF.666.1

Paper Titles

Preface/Committees

Electron and Positron Densities for Mono Vacancy in SiC
p.1

Influence of Electron-Electron Correlations and Lattice Effects on Positron-Electron Enhancement Factors
p.5

The Distribution of Slowing-Down Times of Positrons Emitted from ²²Na and ⁶⁸Ge\⁶⁸Ga Isotopes into Metals
p.10

A Computational Model for Nano Scale Cavities in the Atomic Structure of Polymer Melt and Comparisons to PALS
p.15

Calculation of Gamma Spectra for Positron Annihilation on Molecules
p.21

Investigation of Resonances in the Scattering of a Heavy ‘Positron’ by H₂ that Involve Vibrationally Excited Quasi-Bound States
p.25

Positron Annihilation Characteristics in Superstrong Magnetic Fields
p.31

HomeMaterials Science ForumMaterials Science Forum Vol. 666Electron and Positron Densities for Mono Vacancy...

Electron and Positron Densities for Mono Vacancy in SiC

Abstract:

First principle calculations of the electron and positron band structures are performed for the SiC polytype of the 3C cubic structure. The perfect and vacancy containing elements are considered. The supercell model is incorporated Electron and positron densities as well as the positron lifetime are determined for the Si and C point defects. The resulting characteristics are studied with respect to their counterparts in the perfect crystal. Various approximations to the electron-positron correlations are applied in the calculation of the positron distribution and lifetime. Importance of non-local effects is emphasized.

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Materials Science Forum (Volume 666)

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1-4

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.666.1

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Online since:

December 2010

Authors:

Anna Rubaszek

Keywords:

Positron Annihilation, Silicon Carbide (SiC), Vacancy

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