Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD

Xue Yu Zhang; Ai Min Wu; Hong Yun Yue; Ju An Hu; Li Shi Wen

doi:10.4028/www.scientific.net/MSF.675-677.1287

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HomeMaterials Science ForumMaterials Science Forum Vols. 675-677Preparation of P-Type Microcrystal Si:H Films by...

Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD

Abstract:

P-type microcrystalline silicon films prepared by electron cyclotron resonance（ECR）PECVD are studied here. Silane diluted with Ar (SiH4/Ar=1/19) is used as a source gas and diborane (B2H6) diluted with H2 (100ppm) as doping gases. The effect of flow rate of doping gas on the microstructures and electrical properties of the films were investigated. Raman spectroscopy and X-ray diffraction were used to determine the film structure; AFM was employed to characterize the film surface topography; Hall measurements were carried out on the doped films to determine the carrier type, carrier concentration, and Hall mobility. The optical quality was measure by transmission spectrum.

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Materials Science Forum (Volumes 675-677)

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1287-1290

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https://doi.org/10.4028/www.scientific.net/MSF.675-677.1287

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Online since:

February 2011

Authors:

Xue Yu Zhang, Ai Min Wu, Hong Yun Yue, Ju An Hu, Li Shi Wen

Keywords:

Hall, p-Type Doping, VHF PECVD, μc-Si:H Film

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