Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD

Abstract:

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P-type microcrystalline silicon films prepared by electron cyclotron resonance(ECR)PECVD are studied here. Silane diluted with Ar (SiH4/Ar=1/19) is used as a source gas and diborane (B2H6) diluted with H2 (100ppm) as doping gases. The effect of flow rate of doping gas on the microstructures and electrical properties of the films were investigated. Raman spectroscopy and X-ray diffraction were used to determine the film structure; AFM was employed to characterize the film surface topography; Hall measurements were carried out on the doped films to determine the carrier type, carrier concentration, and Hall mobility. The optical quality was measure by transmission spectrum.

Info:

Periodical:

Materials Science Forum (Volumes 675-677)

Edited by:

Yi Tan and Dongying Ju

Pages:

1287-1290

DOI:

10.4028/www.scientific.net/MSF.675-677.1287

Citation:

X. Y. Zhang et al., "Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD", Materials Science Forum, Vols. 675-677, pp. 1287-1290, 2011

Online since:

February 2011

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Price:

$35.00

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