Effects of Negative Bias Pulse on Characteristics of a-C:H Films Prepared by Plasma-Based Ion Implantation

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A series of a-C:H films have been prepared by plasma-based ion implantation (PBII) with acetylene on AISI 321 substrates. The effect of negative bias pulse on the characteristics of these films was investigated. The structures of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The surface hardness was measured by microindentation tests. The results indicated that the characteristics of these films are strongly depended on the negative bias pulse. When the bias pulse ranges from -10kV to -40kV, the films are typical diamond like carbon (DLC) films, while the films deposited at -5kV are polymer films. The peak intensity ratio of the D-band to that of the G-band (ID/IG) of the DLC films changes with the negative bias pulse. The minimum value of ID/IG (1.02) was gotten at -10kV.

Info:

Periodical:

Materials Science Forum (Volumes 675-677)

Edited by:

Yi Tan and Dongying Ju

Pages:

1279-1282

DOI:

10.4028/www.scientific.net/MSF.675-677.1279

Citation:

Y. J. Wang et al., "Effects of Negative Bias Pulse on Characteristics of a-C:H Films Prepared by Plasma-Based Ion Implantation", Materials Science Forum, Vols. 675-677, pp. 1279-1282, 2011

Online since:

February 2011

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$35.00

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