Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

T. Shirasawa; S. Tanaka; T. Muro; Y. Tamenori; Y. Harada; T. Tokushima; T. Kinoshita; S. Shin; T. Takahashi; H. Tochihara

doi:10.4028/www.scientific.net/MSF.675-677.15

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Preface

How Crystals Form from a Cloud of Atoms
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Microstructure, Texture and Residual Stresses Induced by Surface Thermo-Mechanical Treatments
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Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy
p.15

Development of a Highly Active Pt-Catalyst for Selective Oxidation of CO in Excess H₂ at Room Temperature
p.21

Investigation on the Removal of B Impurity in Metallurgical Grade Si by Electron Beam Melting
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Amorphous Ni-Co-B Catalyst for Hydrolysis of NaBH₄ in Alkaline Solution
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Electrochemical Studies on Al₂O₃-Coated Spinel LiMn₂O₄ for Lithium Ion Batteries
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HomeMaterials Science ForumMaterials Science Forum Vols. 675-677Si 2p Core Level Shifts of the Epitaxial SiON...

Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

Abstract:

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

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Materials Science Forum (Volumes 675-677)

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15-19

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.675-677.15

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Online since:

February 2011

Authors:

T. Shirasawa, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

Keywords:

Photoemission Spectroscopy, Silicon Carbide (SiC), Silicon Oxynitride

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