Selective Synthesis of Boron Nitride Nanotubes

Lai Ping Zhang; Ji Lin Wang; Guo Wei Zhao; Zhan Hui Zhang; Fang Zhang; Yun Le Gu; Wei Min Wang

doi:10.4028/www.scientific.net/MSF.694.408

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HomeMaterials Science ForumMaterials Science Forum Vol. 694Selective Synthesis of Boron Nitride Nanotubes

Selective Synthesis of Boron Nitride Nanotubes

Abstract:

Four types of boron nitride (BN) nanotubes are selectively synthesized by annealing porous precursor in flowing NH3 and NH3/H2 atmosphere at temperature ranging from 1000 to 1200°C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave, bamboo and bubble-chain, are characterized by scanning and transmission electron microscopy. Selectivity of BN nanotubes is estimated as approximately 80 to 95%. The porous precursor B31Fe17(MgO)27 prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in controllable synthesis of the as-grown BN nanotubes. The chemical reaction and annealing mechanism are also discussed.

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Materials Science Forum (Volume 694)

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408-412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.694.408

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Online since:

July 2011

Authors:

Lai Ping Zhang, Ji Lin Wang, Guo Wei Zhao, Zhan Hui Zhang, Fang Zhang, Yun Le Gu, Wei Min Wang

Keywords:

Boron Nitride, Chemical Vapor Deposition (CVD), Nanotube, Synthesis

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