Effect of Gamma-Irradiation towards Stress-Strain Curve of Single Die QFN Package

Abstract:

The aim of the research was to establish the relationship between stress-strain behaviour of single die Quad Flat No lead (SDQFN) and degradation by gamma irradiation. The SDQFN was exposed to Cobalt-60 with different doses from 0.5 Gy, 1.5 Gy, 5.0 Gy, 10.0 Gy and 50.0 kGy. The three-point bending technique was used to measure the flexural stress and strain of the package behaviour relations. After exposing with gamma radiation, the result showed the decreasing in the strength of the package behaviour of irradiated SDQFN when increasing the dose of gamma irradiation. The highest gamma irradiation dose used in this work produced the highest change in stress-strain behaviour of irradiated SDQFN.

• Periodical: Materials Science Forum (Volume 694)
• Pages: 620-624
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.694.620
• Online since: July 2011
• Authors: Wan Yusmawati Wan Yusoff, Azman Jalar, Norinsan Kamil Othman, Irman Abdul Rahman
• Keywords: Degradation, Gamma Irradiation, SDQFN, Stress-Strain Curve

References

[1] N. Chen, K. Chiang, T.D. Her, Y.L. Lai, C. Chen, Electrical characterization and structure investigation of Quad Flat Non-lead package for RFIC applications. J. Solid-State Elect 47 (2003): 315-322.

DOI: 10.1016/s0038-1101(02)00213-7

[2] C. Cevdet, Radiation effects in wide-bandgap semiconductors, in: B.E. Thomas (Edt. ), Focus on Semiconductor Research, Nova Science Publishers Inc., New York, 2005, pp.135-182.

[3] H.S. Andrew, A. Alan, Handbook of Radiation Effects, second ed., Oxford University Press, New York, (2002).

[4] A. Crunteanu, A. Pothier, P. Blondy, F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, P. Tristant, O. Vendier, C. Drevon, J.L. Cazaux, L. Marchand, Gamma radiation effects on RF MEMS capacitive switches. Microelectron Reliab 46 (2006): 1741-1746.

DOI: 10.1016/j.microrel.2006.07.065

[5] T.P. Sokrates, L. Tsetseris, M.J. Beck, S.N. Rashkeev, G. Hadjisavvas, I.G. Batyrev, B.R. Tuttle, A.G. Marinopoulos, X.Y. Zhou, D.M. Fleetwood, R.D. Schrimpf, Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modelling. Solid-State Elect 54 (2010).

DOI: 10.1016/j.sse.2010.04.041

[6] J.J. Wall, R.E. Sharp, L. Pater, The effects of space radiation and burn-in on plastic encapsulated semiconductors. IEEE Radiation Effect Data Workshop (1999): 96-101.

DOI: 10.1109/redw.1999.816062

[7] S. Abdullah, M. F. Abdullah, A. K. Arifin, Fatigue test method for observing the delamination effect in a QFN package. 9th Electronics Packaging Technology Conference (2007): 670-674.

DOI: 10.1109/eptc.2007.4469711

[8] J.M. Pintado, and J. Miguel, Effect of γ-radiation on mechanical behavior of carbon/epoxy composite material, Cryogenics 38, Vol. 38, No. 1 (1998): 85-89.

DOI: 10.1016/s0011-2275(97)00115-x

[9] K. Hirohata, N. Kawamura, M. Mukai, T. Kawakami, H. Aoki, K. Takahashi, Mechanical fatigue test method for chip/underfill delamination in flip chip packages, IEEE Trans Electron Packag Manufact 25(3) (2002): 217-222.

DOI: 10.1109/tepm.2002.804617

[10] M.J. Rizvi, Y.C. Chan, C. Bailey, H. Lu, Study of anisotropic conductive adhesive joint behavior under 3-point bending, Microelectron Reliab 45 (2005).

DOI: 10.1016/j.microrel.2004.10.015

[7] 19 364. 90.

5 Gy 348. 74.

[6] 64 351. 74.

[1] 5 Gy 272. 75.

[4] 23 280. 94.

[5] 0 Gy 257. 74.

[4] 08 258. 46.

[10] 0 Gy 256. 81.

[4] 02 257. 89.

[50] 0 kGy.

[78] 04.

[1] 51.

[79] 46.