Synthesis of High-Purity Ti3SiC2 by Infiltration-Sintering
Titanium silicon carbide (Ti3SiC2) is a remarkable material for its combination of the best properties of metals and ceramics. The high purity Ti3SiC2 ceramic has been prepared by infiltration sintering (IS), and the effect of a small amount of Si on Ti3SiC2 ceramic formation was investigated. The results show that the purity of Ti3SiC2 ceramic could be increased significantly and the sintering time for Ti3SiC2 could be decreased remarkably when proper amount of Si was added in the starting mixture. The Ti3SiC2 sintered compact with a purity of 99.2wt% and a relative density of 97% was obtained by the infiltration sintering from a starting mixture composed of n(Ti):n(Si):n(TiC) = 1:0.3:2 at 1500 °C with holding time of 2/3h.
Hyungsun Kim, Jian Feng Yang, Chuleol Hee Han, Somchai Thongtem and Soo Wohn Lee
Z. L. Lu et al., "Synthesis of High-Purity Ti3SiC2 by Infiltration-Sintering", Materials Science Forum, Vol. 695, pp. 433-436, 2011