Synthesis of High-Purity Ti₃SiC₂ by Infiltration-Sintering

Abstract:

Titanium silicon carbide (Ti₃SiC₂) is a remarkable material for its combination of the best properties of metals and ceramics. The high purity Ti₃SiC₂ ceramic has been prepared by infiltration sintering (IS), and the effect of a small amount of Si on Ti₃SiC₂ ceramic formation was investigated. The results show that the purity of Ti₃SiC₂ ceramic could be increased significantly and the sintering time for Ti₃SiC₂ could be decreased remarkably when proper amount of Si was added in the starting mixture. The Ti₃SiC₂ sintered compact with a purity of 99.2wt% and a relative density of 97% was obtained by the infiltration sintering from a starting mixture composed of n(Ti):n(Si):n(TiC) = 1:0.3:2 at 1500 °C with holding time of 2/3h.

• Periodical: Materials Science Forum (Volume 695)
• Pages: 433-436
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.695.433
• Online since: July 2011
• Authors: Zhen Lin Lu, Qi Dan Xiao, Yong Xin Zhou, Hui Xie
• Keywords: Ceramic, Infiltration-Sintering, Silicon, Ti₃SiC₂

References

[1] Y. Luo, W. Pan, S. Li, et al: Mat. Lett., Vol. 52 (2002), p.245.

[2] Y.C. Zhou and Z.M. Sun: J. Mater. Sci., Vol. 35 (2000), p.4343.

[3] R. Pampuch, J. Lis, L. Stobierski, et al: J. Eur. Ceram. Soc., Vol. 5 (1989), p.283.

[4] N.F. Gao, D. Zhang, Y. Miyamoto, et al: J. Eur. Ceram. Soc., Vol. 22 (2002), p.2365.

[5] J.F. Li, F. Sato and R. Watanabe: J. Mater. Sci. Lett., Vol. 18 (1999), p.1595.

[6] J.F. Li, T. Matsuki and R. Watanabe: J. Am. Ceram. Soc., Vol. 85 (2002), p.1004.

[7] Z.F. Zhang, Z.M. Sun, H. Hashimoto: Metall. Mater. Trans., Vol. 33 (2002), p.3321.

[8] J. Lis, Y. Miyamoto, R. Pampuch, et al: Mater. Lett., Vol. 22(1995), p.163.