Molecular Dynamics Simulation of Al2O3-SiC Interface

Abstract:

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The interfacial energy and diffusion phenomenon of the Al2O3(012)-SiC (011) interface model are studied based on molecular dynamics. The interfacial energy increases firstly until reaches its maximum 0.459J/m2 at the temperature of 1500K and then decreases. The relationship of diffusion coefficients for each kind of atoms is C>Si>O>Al. Diffusion coefficients of atoms increase at first and then decrease as the temperature goes up. This indicates the diffusion mechanism has been changed during the temperature rising process.

Info:

Periodical:

Materials Science Forum (Volumes 697-698)

Edited by:

Tian Huang, Dawei Zhang, Bin Lin, Anping Xu, Yanling Tian and Weiguo Gao

Pages:

192-197

DOI:

10.4028/www.scientific.net/MSF.697-698.192

Citation:

T. T. Zhou et al., "Molecular Dynamics Simulation of Al2O3-SiC Interface", Materials Science Forum, Vols. 697-698, pp. 192-197, 2012

Online since:

September 2011

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Price:

$35.00

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