Simulation of Segmented Double-Gate MOSFETs

Andras Reichardt; Gábor Varga

doi:10.4028/www.scientific.net/MSF.721.325

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HomeMaterials Science ForumMaterials Science Forum Vol. 721Simulation of Segmented Double-Gate MOSFETs

Simulation of Segmented Double-Gate MOSFETs

Abstract:

Nowdays semiconductor manufacturing technology approaches its limit of miniaturization. There is a need for devices with low impact of miniaturization on its functionality. We present here simulation results of double-gate MOSFET devices with variable silicon channel width. Effects of segmentation is shown in characteristics of devices.