A Theoretical Study on the Performance of SnO₂/SiO₂/n-Si Solar Cells

Abstract:

The performance of SnO2/SiO2/n-Si solar cells was studied by considering various transport mechanisms including minority-carrier diffusion, carrier recombination, and tunneling through insulating layer. The tunneling current through the SiO2 layer was obtained by employing the Airy-wavefunction approach. The efficiency was calculated to determine the performance of the cells under AM1 illumination for different values of insulating layer thickness, interface state density, hole life-time, doping density of silicon substrate, and cell thickness. It was shown that the efficiency increases as the insulating layer becomes thinner due to the decrease of short-circuit current. It was also shown that the efficiency increases as the doping density increases up to 6x1022/m3 and it then decreases for higher doping densities. As the interface state density decreases, the efficiency becomes higher. In addition, the increases in the hole lifetime and cell thickness enhance the efficiency of the solar cell.

• Periodical: Materials Science Forum (Volume 737)
• Pages: 1-8
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.737.1
• Online since: January 2013
• Authors: Fatimah A. Noor, Fandi Oktasendra, Euis Sustini, Abdullah Mikrajuddin, Khairurrijal Khairurrijal
• Keywords: Efficiency, Insulating Layer, MIS Solar Cell, Tunneling Current

References

[1] J. Shewchun, R. Singh, M. A. Green, Theory of metal-insulator-semiconductor solar cells, J. Appl. Phys. 48 (1977) 765-770.

DOI: 10.1063/1.323667

[2] H. C. Card, Photovoltaic properties of MIS-Schottky barriers, Solid-State Electron 20 (1977) 971-976.

DOI: 10.1016/0038-1101(77)90206-4

[3] L. Li, H. Xiang, Preparation and research on TiO2/SiO2 nanofilm with high transmittance on solar cell glass, Mater. Sci. Forum 610 (2009) 382-388.

DOI: 10.4028/www.scientific.net/msf.610-613.382

[4] C. G. Granqvist, A. Hultaker, Transparent and conducting ITO films: new developments and applications, Thin Solid Films 411 (2002) 1-5.

DOI: 10.1016/s0040-6090(02)00163-3

[5] Y. –H. Hu, H. –J. Xu, H. Gao, Y. –C. Chen, fabrication the texture zinc oxide thin films and its application in hydrogenated amorphous silicon solar cell, Mater. Sci. Forum 663 (2011) 1077-1080.

DOI: 10.4028/www.scientific.net/msf.663-665.1077

[6] D. Hocine, M. S. Belkaïd, K. Lagha, Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) solar cells, Revue des Energies Renouvelables 11 (2008) 379-384.

DOI: 10.24084/repqj06.255

[7] C. Kilic, A. Zunger, Origins of coexistence of conductivity and transparency in SnO2, Phys. Rev. Lett. 88 (2002) 095501-1/4.

[8] Y. Matsui, Y. Yamamoto, S. Takeda, Stability in electrical properties of ultra thin oxide films, Mat. Res. Sym. Proc. 621 (2000) 491-496.

DOI: 10.1557/proc-621-q4.9.1

[9] Y. Mi, H. Okada, S. Iwata, Electronic structures and optical properties of ZnO, SnO2, and In2O3, Jpn. J. Appl. Phys. 38 (1999) 3453-3457.

[10] M.-M. Bagheri-Mohagheghi, M. Shokooh-Saremi, The influence of Al doping on the electrical, optical and structural properties of SnO2 transparent conducting films deposited by the spray pyrolysis technique, J. Phys. D: Appl. Phys. 37 (2004) 1248-1253.

DOI: 10.1088/0022-3727/37/8/014

[11] R. Gordon, Criteria for choosing transparent conductors, MRS Bull. 25 (2000) 52-57.

DOI: 10.1557/mrs2000.151

[12] H. –W. Ryu, Y. –J. Park, H. –S. Noh, J. –S. Park, Characteristics of SnO2 thin films deposited by RF magnetron sputtering, Mater. Sci. Forum 449 (2004) 993-996.

DOI: 10.4028/www.scientific.net/msf.449-452.993

[13] W. W. Wenas, S. Riyadi, Carrier transport in high-efficiency ZnO/SiO2/Si solar cells, Sol. Energy Mater. Sol. Cells 90 (2006) 3261-3267.

DOI: 10.1016/j.solmat.2006.06.026

[14] F. Bouzid, S. Ben Machich, The effect of solar spectral irradiance and temperature on the electrical characteristics of a ZnO-SiO2-Si (N) photovoltaic structure, Revue des Energies Renouvelables 13 (2010) 283-294.

[15] A. B. Suryamas, Electron spin polarization in semiconductor heterostructure with single and double barriers, Thesis Magister, Institut Teknologi Bandung, Indonesia, 2007. (in Indonesian)

[16] F. A. Noor, M. Abdullah, Sukirno, Khairurrijal, Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal oxide–semiconductor (MOS) capacitor calculated using exponential- and Airy wavefunction approaches and a transfer matrix method, J. Semicond. 31 (2010) 13402-1/5.

DOI: 10.1088/1674-4926/31/12/124002

[17] S. M. Sze, K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, John Wiley & Sons, New Jersey, 2007.

[18] W. Xie, L. Zhang, S. Liu, Modification of the electrodes of organic light-emitting devices using the SnO2 ultrathin layer, Semicond. Sci. Technol. 19 (2004) 380-383.

DOI: 10.1088/0268-1242/19/3/014

[19] J. Shewchun, J. Dubow, A. Myszkowski, R. Singh, R, The Operation of the Semiconductor-Insulator-Semiconductor (SIS) Solar Cells: Theory, J. Appl. Phys. 49 (1978) 855-864.

DOI: 10.1063/1.324616

[20] Khairurrijal, W. Mizubayashi, S. Miyazaki, M. Hirose, Analytic model of direct tunnel current through ultrathin gate oxides, J. Appl. Phys. 87 (2000) 3000-1/5.

DOI: 10.1063/1.372290

[21] J. F. Wager, Transparent electronics: Schottky barrier and heterojunction considerations, Thin Solid Films 516 (2008) 1755–1764.

DOI: 10.1016/j.tsf.2007.06.164

[22] E. J. H. Lee, C. Ribeiro, T. R. Giraldi, E. Longo, E. R. Leitea, J. A. Varela, Photoluminescence in quantum-confined SnO2 nanocrystals: evidence of free exciton decay, Appl. Phys. Lett. 84 (2004) 1745-1747.

DOI: 10.1063/1.1655693

[23] A. H. M. Shousha, Performance characteristics of thin film MIS solar cells, Sol. Wind Technol. 6 (1989) 705-712.

DOI: 10.1016/0741-983x(89)90008-8

[24] N. R. Saha, D. Roychoudhury, P. K. Basu, Analytical study of the performance of minSIS solar cells with a back surface field, Appl. Phys. A 32 (1983) 187-193.

DOI: 10.1007/bf00820259