Preparation and Electrical Properties of Mn-Co-Ni-O Thin-Film for NTC Thermistors Application

Abstract:

Mn-Co-Ni-O (Mn:Co:Ni=1.74:0.72:0.54, MCN) thin films with single cubic spinel structure were prepared on Si substrates by metal organic solution deposition (MOSD) method at different annealing temperatures. The effects of annealing temperature on the phase component, crystalline microstructure, surface morphology and electrical properties of the MCN thin films were studied. According to the results of x-ray diffraction pattern, the MCN thin film annealed at 650 had spinel structure. Observation with field emission scanning electron microscope (FE-SEM) on the MCN thin films showed that the grain size increased with increasing annealing temperature. The resistance measured at room-temperature was 18.143, 12.457, 2.435 and 3.141MΩ for the MCN thin films annealed at 650, 700, 750 and 800, respectively. The values of thermistor constant (B_30/85) and activation energy (Ea) were in the range of 3260-4840K and 0.28-0.42eV, respectively.

• Periodical: Materials Science Forum (Volumes 745-746)
• Pages: 599-604
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.745-746.599
• Online since: February 2013
• Authors: Xue Ying Chen, Lei Wang, Jin Bao Xu, Liang Bian, Bo Gao
• Keywords: Co-Mn-Ni-O, Electrical Properties, NTC Thermistor, Thin Film

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