Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)-Silicon Prepared by Vacuum Directional Solidification

Wen Hui Ma; Yong Jiang; Yang Zhou; Kui Xian Wei; Bin Yang; Yong Nian Dai; Kazuki Morita

doi:10.4028/www.scientific.net/MSF.750.316

Paper Titles

Structure and Electrochemical Properties of DLC/SiC Films on the Surface of Magnesium Alloy by Plasma Immersion Ion Deposition
p.298

The Effect of Working Pressure on the Composition and Optical Properties of TiO₂ Films Bombarded by N Ion Beams
p.302

Glass-Forming Ability and Mechanical Properties of Zr-Ni-Al Bulk Metallic Glasses with High Zr Content
p.306

The Effect of Pt Addition on the Structure and Magnetic Properties of Melt-Spun Fe_80–xPt_xB₂₀ Alloys
p.311

Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)-Silicon Prepared by Vacuum Directional Solidification
p.316

The Research of Bubble Adsorption to Purify Silicon in the Al-Si System
p.320

A Developing Method to Prepare Micro-Nanopowder by Incorporating Jet Milling and Electrostatic Dispersion
p.324

Effects of Lanthanide Substitution on the Sintering Behavior of Bismuth Titanate Ceramics Prepared by the Chemical Coprecipitation Method
p.328

Development of Silicon Nitride Porous Bodies with Micro-Macro Complex Pore Structure for the Application of the ‘Bio-Filter’
p.332

HomeMaterials Science ForumMaterials Science Forum Vol. 750Effect of Withdrawal Rate on Defects of Upgraded...

Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)-Silicon Prepared by Vacuum Directional Solidification

Abstract:

The structural defects including dislocations and grain boundaries (GBs) in upgraded metallurgical grade silicon (UMG-Si) prepared by vacuum directional solidification were investigated. The results demonstrated that higher withdrawal rates increased the dislocation density. The state of melt growth changed from quasi-equilibrium to non-equilibrium, and the GB type was also highly related to the withdrawal rate, especially for ∑3 boundary. The change of total interfacial energy and increase of carbon concentration may be a possible driving mechanism for this phenomenon.