Orientation Selectivity of Secondary Recrystallization in Grain-Oriented Silicon Steel

Abstract:

It has been observed that grain size of Goss secondary grain has a strong correlation with deviation angle from the exact Goss orientation and sharper Goss grain has larger grain diameter. This orientation selectivity of secondary recrystallization has been investigated with the statistical model of grain growth in which inhibitor and texture are taken into account. The model assumes that sharper Goss grain has a higher frequency of CSL boundaries to the matrix grains and thus has lower statistical grain boundary energy and suffers lower pinning force from the inhibitor. The analysis showed that this model successfully explains orientation selectivity and depicts the effect of inhibitor and texture.

• Periodical: Materials Science Forum (Volume 753)
• Pages: 337-340
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.753.337
• Online since: March 2013
• Authors: Yoshiyuki Ushigami, Yoshihiro Arita, Kohsaku Ushioda
• Keywords: Anisotropic Grain Boundary Energy, CSL Boundary, Goss Texture, Grain Growth, Grain-Oriented Silicon Steel, Inhibitor, Secondary Recrystallization

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