Influence of Fabrication Parameter on the Nanostructure of SiNWs under HF/AgNO₃/Fe(NO₃)₃ Etching System

Abstract:

Large-area SiNWs has been successfully fabricated through one-step metal-assisted chemical etching process at room temperature. The effects of key fabrication parameters (AgNO₃ concentration, Fe (NO₃)₃ concentration, and etching time) on the nanostructure SiNWs were carefully investigated by SEM, TEM, respectively. The results show that AgNO₃ concentration and Fe (NO₃)₃ concentration play important roles to the lengths and arrangements of SiNWs arrays in one-step MACE. The morphological transition of Si surfaces from solid nanowires to porous nanowires can be found with increasing AgNO₃ concentration and Fe (NO₃)₃ concentration, which indicates that the re-dissolved Ag⁺ would work as the main oxidative species for oxidizing the silicon substrate and forming SiNWs in the HF/ AgNO₃/ Fe (NO₃)₃ etching system. The length of SiNWs is increased with increasing AgNO₃ concentration from 0.005 mol/L to 0.02 mol/L and etching time, the chemical polish phoenomenon can be observed when the Fe (NO₃)₃ concentration increases to 0.5 mol/L. A novel mechanism is proposed to explain the formation of SiNWs in HF/ AgNO₃/ Fe (NO₃)₃ solution.

• Periodical: Materials Science Forum (Volumes 809-810)
• Pages: 93-98
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.809-810.93
• Online since: December 2014
• Authors: Yong Yin Xiao, Xiu Hua Chen*, Wen Hui Ma, Shao Yuan Li, Yu Ping Li, Jia Li He, Jiao Li, Hui Zhang
• Keywords: HF/AgNO₃/Fe(NO₃)₃ Etchant, One-Step MACE, Silicon Nanowires

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