Paper Titles

Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
p.1363

Spectroscopy of Shallow Donor Impurities in GaAs/GaAlAs Multi-Quantum Wells
p.1369

Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level
p.1375

Scanning Tunneling Microscopy Studies of Semiconductor Surface Defects
p.1381

The Atomic and Electronic Structure of Ordered Buried B(2x1) Layers in Si(100)
p.1391

Negative U Systems at Semiconductor Surfaces
p.1397

Ab Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface - A Proposal for New Surface Treatment
p.1403

Two-Dimensionally Localized Vibrational Mode due to Al Atoms Substituting for Ga One-Monolayer in GaAs
p.1409

0 Surrounding of P_b Defects at the (111)Si/SiO₂ Interface
p.1415

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87The Atomic and Electronic Structure of Ordered...

The Atomic and Electronic Structure of Ordered Buried B(2x1) Layers in Si(100)

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1391-1396

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1391

Citation:

Cite this paper

Online since:

January 1992

Authors:

M. Needels, M.S. Hybertsen, M. Schluter

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: