Principles of Controlled Exposure in Semiconductor Materials Science of Low-Dimensional Systems

A.V. Blagin; M.L. Lunina; A.G. Kozaeva

doi:10.4028/www.scientific.net/MSF.843.151

Paper Titles

Formation of Photocatalytic Nano-Centers on the Surface of the Photocatalytic Sorbing Agent
p.123

Calculation of Adsorption Parameters for Lithium on Carbon Nanotube (7,7) with a Double Vacancy
p.132

Experiments on Obtaining Nanostructured Metallic Materials and their Investigation
p.139

Physical Aspects of the Liquid Zones Thermomigration Method for Formation of Electronic Technics Materials with the Required Substructure
p.145

Principles of Controlled Exposure in Semiconductor Materials Science of Low-Dimensional Systems
p.151

Magnetic Properties of Mn Substituted Barium Hexaferrite Single Crystals
p.155

Residual Stress Measurements Using Elasto-Plastic Indentation and ESPI
p.161

The Study of Conditions for the Silicon Carbide Crystals Formation in the Complex Composition Metal Melt
p.167

Qualitative Identification of Alloys of Precious Metals by Means of Adaptive Changes the Mode Polarization
p.173

HomeMaterials Science ForumMaterials Science Forum Vol. 843Principles of Controlled Exposure in Semiconductor...

Principles of Controlled Exposure in Semiconductor Materials Science of Low-Dimensional Systems

Abstract:

The article discusses the principles of controlled technological influence the knowledge of which allows a researcher to effectively plan pilot studies in materials science and technologies of electronic equipment. The following principles are defined: uses of different temporary scales of thermodynamic processes; a choice of spatial scale to carry the influence; compliances of a set of influence parameters to a range of system reactions and accounting of inertia of processes heat and mass transfer in two-phase systems. The importance of finding the ways to organize the researchers in the optimum way is exemplified with a certain experiment.

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Periodical:

Materials Science Forum (Volume 843)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.843.151

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Online since:

February 2016

Authors:

A.V. Blagin, M.L. Lunina, A.G. Kozaeva*

Keywords:

Heat Transfer, Mass Transfer, Principles of Controlled Technological Influence, Range of System Reactions, Set of Influence Parameters, Spatial Scales, Temporary Scales, Thermodynamic Processes

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* - Corresponding Author

References

[1] G. Nickolis, I. Prokhozhin, Exploring Complexity, Mir Publ., Moscow, (1990).

Google Scholar

[2] S.P. Vikhrov, N.V. Bodiagin, T.G. Larina, S.M. Mursalov, The Growth Processes of Disordered Semiconductors to the Self-Organization theory, FTP Publ. 38(8) (2005) 953-959.

DOI: 10.1134/1.2010685

Google Scholar

[3] V.N. Lozovsky, L.S. Lunin, A.V. Blagin, Gradient MultiComponent Liquid-Phase Crystallization of Semiconductor Materials, SKNC VS. Publ., Rostov-on-Don, (2003).

Google Scholar

[4] L.S. Lunin, A.V. Blagin, A.V. Alfimova, A.I. Popov, P. I Razumovsky, Physics of Semiconductor Heterostructures Gradient Epitaxy, SKNC VS. Publ., Rostov-on-Don, (2008).

Google Scholar

[5] A.V. Blagin, V.V. Kalinchuk, V.I. Lebedev, L.S. Lunin, The Physics of Crystallization and Solid-State Structures of Defects at the Micro- and Nanoscale, UNC RAN. Publ., Rostov-on-Don, (2009).

Google Scholar

[6] A.I. Lebedev, Physics of Semiconductor Devices, Fizmatlit Publ., Moscow, (2008).

Google Scholar

[7] N.I. Kazakova, N.V. Nemchinova, B.A. Krasin, Studying the Macro- and Microstructure of Silicon, Modern problems of science and education. 6 (2007).

Google Scholar

[8] A.V. Blagin, N.P. Efremova, V.P. Popov, B.M. Seredin, Substructure Formed in Gallium Arsenide under Gradient LPE, Materials XI Intern. Sci. Conf. Solid State Chemistry: nanomaterials, nanotechnologies,. (2012) 182-183.

Google Scholar

[9] A.A. Barannik, A.V. Blagin, E.I. Kireev, M.L. Lunina, Kinetics of Crystallization of Bismuth Heterosystems Al-In-Sb-Bi and Ga-As-P-Bi, Journal of Russian Academy of Sciences. inorganic materials. 44(12) (2008) 1430-1433.

DOI: 10.1134/s0020168508120042

Google Scholar

[10] A.V. Blagin, A.G. Kozaeva, V.V. Sakharov, Entropy Analysis of Technical Systems with Multi-Level Organization, Math. universities. North-Kavk. Region. Tech. Sciences. 6 (2013).

Google Scholar