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InAlGaP Heterostructures and LEDs optimization

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Abstract:

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a heterostructure having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel. Good correlation in simulation and experimental results has been obtained. It was determined that the best AlGaInP heterostructure contains 5 wide QW (width 10 nm each) in active region. The main thing is that in central ones there is maximum radiation and at the both ends of active region are “barriers” which help to concentrate electrons/holes in active region and additionally “protect” QW from different defects.

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Periodical:

Materials Science Forum (Volume 845)

Pages:

30-33

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.845.30

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Cite this paper

Online since:

March 2016

Authors:

Sergey Didenko, Oleg Rabinovich*, Sergey Legotin, Irina Fedorchenko, Andrey Krasnov, Yuriy Osipov

Keywords:

AlInGaP, Light-Emitting Diode, Simulation

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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References

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