Preparation and Dielectric Property of C/SiO2 Composite via Self-Assembly

Zi Dong Zhang; Xiu Jie Ji; Chen Qin; Hui Min Wang; Shu Hui Chen; Pei Tao Xie; Run Hua Fan

doi:10.4028/www.scientific.net/MSF.848.369

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HomeMaterials Science ForumMaterials Science Forum Vol. 848Preparation and Dielectric Property of C/SiO2...

Preparation and Dielectric Property of C/SiO₂ Composite via Self-Assembly

Abstract:

In this paper, C/SiO₂ bulk composite was prepared via SiO₂ microspheres’ self-assembly process combined with heat treatment. SEM and impedance analyzer was used to investigate the microstructure and high-frequency dielectric properties of the composites. The results show that SiO₂ microspheres constituted the composite matrix, whose porosity was slightly higher than the densest hexagonal stacking. Sheet carbon distributed in pores formed by SiO₂ microspheres. The real and imaginary parts of the dielectric constant of the composite material increased with the content of carbon, but decreased with the frequency. The permittivity of C/SiO₂ composite could be adjusted by control the concentration of PVA solution.

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Periodical:

Materials Science Forum (Volume 848)

Pages:

369-373

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.848.369

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Online since:

March 2016

Authors:

Zi Dong Zhang, Xiu Jie Ji, Chen Qin, Hui Min Wang, Shu Hui Chen, Pei Tao Xie, Run Hua Fan

Keywords:

Permittivity, Self-Assembly, SiO₂ Microsphere

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