Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits

Georgios Kampitsis; Stavros A. Papathanassiou; Stefanos N. Manias

doi:10.4028/www.scientific.net/MSF.856.362

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HomeMaterials Science ForumMaterials Science Forum Vol. 856Comparative Analysis of the Thermal Stress of Si...

Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits

Abstract:

In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed through three-dimensional finite element analysis, utilizing the experimentally extracted power dissipation for each transistor. Simulation results confirm the exceptional ruggedness that SiC power MOSFETs exhibit outside their safe operating area.

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Periodical:

Materials Science Forum (Volume 856)

Pages:

362-367

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.856.362

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Online since:

May 2016

Authors:

Georgios Kampitsis*, Stavros A. Papathanassiou, Stefanos N. Manias

Keywords:

MOSFET, Reliability, Robustness, Ruggedness, Short Circuit, Silicon Carbide (SiC), Thermal Stress

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References

[1] A. Castellazzi, T. Funaki, T. Kimoto, T. Hikihara, Thermal instability effects in SiC Power MOSFETs, Microelectron. Reliab. 52 (2012) 2414–2419.

DOI: 10.1016/j.microrel.2012.06.096

Google Scholar

[2] X. Huang, G. Wang, Y. Li, A.Q. Huang, B.J. Baliga, Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection, in: Conf. Proc. - IEEE Appl. Power Electron. Conf. Expo. - APEC, 2013: p.197–200.

DOI: 10.1109/apec.2013.6520207

Google Scholar

[3] A. Fayyaz, L. Yang, A. Castellazzi, Transient robustness testing of silicon carbide (SiC) power MOSFETs, in: 15th Eur. Conf. Power Electron. Appl., (2013).

DOI: 10.1109/epe.2013.6634645

Google Scholar

[4] M. Riccio, a. Castellazzi, G. De Falco, a. Irace, Experimental analysis of electro-thermal instability in SiC Power MOSFETs, Microelectron. Reliab. 53 (2013) 1739–1744.

DOI: 10.1016/j.microrel.2013.07.014

Google Scholar

[5] D. Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene, Robustness of 1. 2kV SiC MOSFET devices, Microelectron. Reliab. 53 (2013) 1735–1738.

DOI: 10.1016/j.microrel.2013.07.072

Google Scholar

[6] M. Willander, M. Friesel, Q. Wahab, B. Straumal, Silicon carbide and diamond for high temperature device applications, J. Mater. Sci. Mater. Electron. 17 (2006) 1–25.

DOI: 10.1007/s10854-005-5137-4

Google Scholar

[7] H.J.H. Jain, S. Rajawat, P.A.P. Agrawal, Comparision of wide band gap semiconductors for power electronics applications, 2008 Int. Conf. Recent Adv. Microw. Theory Appl. (2008) 878–881.

DOI: 10.1109/amta.2008.4763184

Google Scholar

[8] M. Cotorogea, A. Claudio, J. Aguayo, Study of the short-circuit behavior of homogeneous IGBTs using experimental results and a physics based SPICE-model, in: IEEE Annu. Power Electron. Spec. Conf., 2000: p.1588–1593.

DOI: 10.1109/pesc.2000.880542

Google Scholar

[9] V. John, B.S. Suh, T.A. Lipo, Fast-clamped short-circuit protection of IGBT's, IEEE Trans. Ind. Appl. 35 (1999) 477–486.

DOI: 10.1109/28.753644

Google Scholar

[10] G. Kampitsis, M. Antivachis, S. Kokosis, S. Papathanassiou, S. Manias, An Accurate Matlab / Simulink Based SiC MOSFET Model for Power Converter Applications, (2015) 1058–1064.

DOI: 10.1109/apec.2015.7104479

Google Scholar

[11] D. Othman, M. Berkani, S. Lefebvre, A. Ibrahim, Z. Khatir, A. Bouzourene, Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application, Microelectron. Reliab. 52 (2012) 1859–1864.

DOI: 10.1016/j.microrel.2012.06.078

Google Scholar

[12] A. Mihaila, F. Udrea, G. Amaratunga, G. Brezeanu, A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET, in: Int. Semicond. Conf. 23rd Ed. CAS 2000, 2000: p.185–188.

DOI: 10.1109/smicnd.2000.890214

Google Scholar

[13] Z. Wang, X. Shi, L. Tolbert, F. Wang, Z. Liang, D. Costinett, et al., Temperature Dependent Short Circuit Capability of Silicon Carbide (SiC) Power MOSFETs, IEEE Trans. Power Electron. 8993 (2015) 1–1.

DOI: 10.1109/tpel.2015.2416358

Google Scholar