Environment-Friendly Chemical Mechanical Polishing Slurry for SiC Wafer

Abstract:

In order to avoid the environmental pollution and the harm to body of traditional polishing slurries, an environment-friendly chemical mechanical polishing technology is proposed for SiC wafer in this study. With this method, SiC material is removed by utilizing the strong oxidability of nanotitanium dioxide particles in chemical mechanical slurry in the existence of ultraviolet. While, the oxidbillity will recede in absence of ultraviolet when the polishing process finishes. On the basis of investigating in the reaction mechanism between SiC and nanotitanium dioxide, the slurries are prepared for the environment-friendly chemical mechanical polishing technology. The results show that the ultraviolet-assisted CMP slurry has strong oxidation for SiC material. This method is high-efficient for polishing SiC wafer. The surface roughness is reduced to about Ra 0.1μm from Ra 0.818μm after polishing for one hour.

• Periodical: Materials Science Forum (Volume 874)
• Pages: 415-419
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.874.415
• Online since: October 2016
• Authors: Ze Wei Yuan*, Yan He, Quan Wen, Hai Yang Du
• Keywords: Chemical Mechanical Polishing, Environment-Friendly, SiC Wafer, Slurry

References

[1] X.F. Chen, X. G. Xu, X.B. Hu, Anisotropy of chemical mechanical polishing in silicon carbide substrates. Mater. Sci. Eng., B 142 (2007) 28-30.

[2] A. Venu Gopal, P. Venkateswara Rao, A new chip-thickness model for performance assessment of silicon carbide grinding. Int. J. Adv. Manuf. Technol. 24 (2004) 816-820.

DOI: 10.1007/s00170-003-1788-6

[3] Y. Zhou, G.S. Pan, X.L. Shi. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry. Surf. Coat. Tech. 251 (2014) 48-55.

DOI: 10.1016/j.surfcoat.2014.03.044

[4] H. Aida, T. Doi, H. Takeda . Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials. Curr. Appl. Phys. 12 (2012) 41-46.

DOI: 10.1016/j.cap.2012.02.016

[5] C.L. Nelson, W.C. Mitchel, R.L. Hengehold, Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC, J. Electron. Mater. 30 (2001) 1271-1275.

DOI: 10.1007/s11664-001-0111-2

[6] L. Zhou, V. Audurier, P. Pirouz, et al, Chemomechanical polishing of silicon carbide, J. Electron. Soc. 144 (1994) 161-163.

[7] W. Qian, M. Skowronski, G. Augustine, et al, Characterization of polishing related surface damage in (0001) silicon carbide substrates. Electrochem. Soc. 142 (1995) 4290-4294.

DOI: 10.1149/1.2048499

[8] C.H. Li, I. B. Bhat, R.J. Wang, et al，Electro-chemical mechanical polishing of silicon carbide, J. Electron Mater., 33 (2004) 481-486.

[9] F. J Wang, Z.D. Wang, Z.Q. Yang, Study on technique of magnetorheological finishing single crystal silicon carbide. Science and Technology Innovation Herald, 32 (2010) 112-113.

[10] Z. Z Zhu, V. Murator, Tribochemical polishing of silicon carbide in oxidant solution, Wear, 225-229 (1999) 848-856.

DOI: 10.1016/s0043-1648(98)00392-5

[11] K. Yamamura, T. Takiguchi, M. Ueda, et al. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface, CIRP Ann-Manuf Techn. 60 (2011) 571-574.

DOI: 10.1016/j.cirp.2011.03.072

[12] H. Deng, K. Endo, K. Yamamura. Damage-free and atomically-flat finishing of single crystal SiC by combination of oxidation and soft abrasive polishing. Procedia CIRP 13 ( 2014 ) 203-207.

DOI: 10.1016/j.procir.2014.04.035

[13] H. Deng, K. Yamamura. Smoothing of reaction sintered silicon carbide using plasma assisted polishing, Curr. Appl. Phys. 12 (2012) 24-28.

DOI: 10.1016/j.cap.2012.04.004

[14] W.L. Chou, C.T. Wang, W.C. Chang, et al. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation, J. Hazard Mater., 180 (2010) 217-224.

DOI: 10.1016/j.jhazmat.2010.04.017

[15] C.Y. Hu, S.L. Lo, C.M. Li, et al. Treating chemical mechanical polishing (CMP) wastewater by electro-coagulation-flotation process with surfactant. J. Hazard Mater. , 20 (2005) 15-20.

DOI: 10.1016/j.jhazmat.2004.12.038