The Electrical Characterization of Hydrogenated Amorphous Silicon Germanium Film Used in Un-Cooled Micro-Bolometer

Zhe Quan Chen; He Yong; Zhong Fang; Xu Chao Phan; He Yuan

doi:10.4028/www.scientific.net/MSF.937.3

Paper Titles

Preface

The Electrical Characterization of Hydrogenated Amorphous Silicon Germanium Film Used in Un-Cooled Micro-Bolometer
p.3

The Optimization of Vertically Aligned Carbon Nanotubes’ Synthesis According to the Selected Parameters
p.9

Preparation of TiO₂-Reduced Graphene Oxide Nanocomposites for Sunlight Degradation of Methylene Blue
p.17

Reduced Graphene Oxide/Carbon Nanotube Composites for High Electrochemical Performance Supercapacitors
p.25

Investigation on Structural Steel and Silicon Carbide Aluminum Metal Matrix Composite Spur Gears Using PTC Creo and ANSYS 16.0
p.33

Analysis on Vibration Characteristics of Wind Turbine Blade to Improve the Effectiveness through CFD Developed by ANSYS
p.43

Research on Corrosion Resistance of Steel Pipes in Water of Oilfield
p.51

Effect of Welding Processes with High Heat Input on the Microstructure and Toughness of Coarse-Grained Heat-Affected Zone of a High-Strength High-Toughness Steel
p.61

HomeMaterials Science ForumMaterials Science Forum Vol. 937The Electrical Characterization of Hydrogenated...

The Electrical Characterization of Hydrogenated Amorphous Silicon Germanium Film Used in Un-Cooled Micro-Bolometer

Abstract:

In this paper, the deposition and the electrical characterization of hydrogenated amorphous silicon germanium (a-Si_xGe_y:H) thin films were performed by plasma enhanced chemical vapour deposition (PECVD) at low temperature with different flow ratios of SiH₄/GeH₄. The temperature coefficient of resistance (TCR) and temperature dependence of conductivity were measured to study the influence of deposition parameter. The resistance uniformity were also investigated. The result showed that the film presented high TCR values of around 3.5%K^-1 and moderate conductivity value of 1.47×10^-3 (Ω•cm)^-1 respectively at room temperature, while the non-uniformity below 5% which indicated the high resistance uniformity in films.

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Periodical:

Materials Science Forum (Volume 937)

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3-8

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https://doi.org/10.4028/www.scientific.net/MSF.937.3

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Online since:

October 2018

Authors:

Zhe Quan Chen, He Yong*, Zhong Fang, Xu Chao Phan, He Yuan

Keywords:

Amorphous Silicon Germanium Film, Electrical Characterization, PECVD, Un-Cooled Micro-Bolometer

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