Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

Article Preview

Abstract:

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

433-438

Citation:

Online since:

August 2019

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2019 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] S. H. Chaki, S. M. Chauhan, J. P. Tailar, M. P. Deshpande, Journal of Material Research and Technology, (2016) 1-6.

Google Scholar

[2] M.R.I. Chowdhujry, J. Podder, and A.B.M.O. Islam, Cryst. Res. Technol. 46(I) (2011) 267-271.

Google Scholar

[3] F Zuo, B Zhang, X Tang, Y Xie, Nantechnology, 2007 18(21) 1-6.

Google Scholar

[4] D. B. Fan, H Wang, Y.C. Zhang, J Cheng, B Wang, H Yan, Mater Chem Phys. 80(I) (2003) 44-47.

Google Scholar

[5] C. D. Lokhade, A. Ennaouti, P. S. Patil, M. Giersig, M. Muller, K.Diesner, H. Tributsch, Thin Solid Film. 330(2) (1998) 70-75.

DOI: 10.1016/s0040-6090(98)00500-8

Google Scholar

[6] R Tepparo, P. D. Arco, A. Lichanot, Chem Phys Lett. 273(1-2) (1997) 83-90.

Google Scholar

[7] H.M. Pathan, S.S. Kale, C.D. Lokhande, S.H. Han, O. S. Jou, Mater. Res. Bull. 42(2007) 1565.

Google Scholar

[8] N. Khaorapapong, A. Ontam, J. Khemprasit, M. Ogawa, Appl. Clay Sci. 43 (2009) 238.

DOI: 10.1016/j.clay.2008.07.027

Google Scholar

[9] S.A.M. Hernandez, S.J. Sandoval, R.C. Perez, G.T. Delgado, B.S. Chao, O.J. Sandoval, J. Cryst. Growth, 256(2003)12.

Google Scholar

[10] M. Demper, L.Chen, C.Bradford, K.A. Prior, W. Heimbrodt, Solid State Communication. 150(2010)1092.

Google Scholar

[11] P.Zhao, Q. Zeng, X. He, H. Tang, K. Huang, J. Cryst. Growth. 310(2008) 4268.

Google Scholar

[12] J. Lu, P.F.Qi, Y.Y. Peng, Z. Y. Meng, Z.P. Yang, W. C. Yu, Y.T. Qian, Chem. Mater. 13(2001) 2169.

Google Scholar

[13] C. Ulutas, E. Guneri, F. Kirmizigul, G Altindemir, F. Gode, C. Gumus, Material Chemistry and Physics 138(2013) 817-822.

DOI: 10.1016/j.matchemphys.2012.12.065

Google Scholar

[14] C. Gumus, C.Ulutas, R. Esen, O. M. Ozkendir, Y.Ufuktepe, Thin Solid Films. 492 (2005)1-5.

Google Scholar

[15] C. D. Lokhande, Mater, Chem. Phys. 27(1991)1.

Google Scholar

[16] R. N. Bhattaracharya, J. Electrochem. Soc. 129 (1982) 332.

Google Scholar

[17] A. B. Lundin, G. A. Kitaev, Inorg. Mater. (1965) 2107.

Google Scholar

[18] I. Kaur, D. K. Pandya, K. L. Chopra, J. Electrochem Sic. 127(1980)143.

Google Scholar

[19] Cullity, Elements of X-ray Diffraction, Addision-Sesley Publishing Company Inc. USA. (1978) P-575.

Google Scholar

[20] D. K. Sonavane, S. K. Jare, R. V. Kathare, R. N. Bulakhe, J.-J. Shim, Materials Today: Proceedings 5 (2018) 7743–7747.

DOI: 10.1016/j.matpr.2017.11.451

Google Scholar

[21] D. K. Sonavane, A. V. Mancharkar, National Conference on Advanced Materials and Applications, Pune. (2016) 150-151.

Google Scholar

[22] M. Dhanam, B. Kavitha, M. Shanmugapriya, Chalcogenide, Letters. 6 (10) (2009) 541-547.

Google Scholar