The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma

Abstract:

Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The interaction between plasma and the surface of silicon wafer is qualitatively discussed.

• Periodical: Materials Science Forum (Volume 980)
• Pages: 88-96
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.980.88
• Online since: March 2020
• Authors: Jin Rui Bai, Rui Xiang Hou*
• Keywords: Location of Silicon Wafers, Processing Time of Plasma, Roughness, Surface Morphology, The Way of Placement

References

[1] GAO Jingjing, LIU Jihua, LI Xianguo, et al. The determination of 52 elements in marine geological samples by an inductively coupled plasma optical emission spectrometry and an inductively coupled plasma mass spectrometry with a high-pressure closed digestion method[J]. Acta Oceanologica Sinica, 2017, 36(1):109-117.

DOI: 10.1007/s13131-017-0991-5

[2] Mi M, Ma X H, Ling Y, et al. Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region[J]. IEEE Transactions on Electron Devices, 2017, 64(12):4875-4881.

DOI: 10.1109/ted.2017.2761766

[3] Nan H, Wu Z, Jiang J, et al. Improving the electrical performance of MoS2 by mild oxygen plasma treatment[J]. Journal of Physics D Applied Physics, 2017, 50(15):154001.

DOI: 10.1088/1361-6463/aa5c6a

[4] Canullo L, Genova T, Mandracci P, et al. Morphometric Changes Induced by Cold Argon Plasma Treatment on Osteoblasts Grown on Different Dental Implant Surfaces[J]. International Journal of Periodontics & Restorative Dentistry, 2017, 37(4):541.

DOI: 10.11607/prd.2916

[5] Elroz M, Lakiss L, Vicente A, et al. Ultra-fast framework stabilization of Ge-rich zeolites by low-temperature plasma treatment[J]. Chemical Science, 2018, 5(5):68-80.

DOI: 10.1039/c3sc51892b

[6] Wan Z, Yi C, Pankaj S K, et al. High voltage atmospheric cold plasma treatment of refrigerated chicken eggs for control of Salmonella Enteritidis contamination onegg shell[J]. LWT - Food Science and Technology, 2017, 76:124-130.

DOI: 10.1016/j.lwt.2016.10.051

[7] Duan S, Wang Y, Xia L, et al. Removal of U(VI) from aqueous solution by amino functionalized flake graphite prepared by plasma treatment[J]. Acs Sustainable Chemistry & Engineering, 2017, 5(5):4073-4085.

DOI: 10.1021/acssuschemeng.7b00069

[8] Ozturk S, Aydin L, Kucukdogan N, et al. Optimization of lapping processes of silicon wafer for photovoltaic applications[J]. Solar Energy, 2018, 164:1-11.

DOI: 10.1016/j.solener.2018.02.039

[9] Meng F, Liu J, Shen L, et al. High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells[J]. Frontiers in Energy, 2017, 11(1):1-7.

DOI: 10.1007/s11708-016-0435-5

[10] Kayabasi E, Ozturk S, Celik E, et al. Determination of cutting parameters for silicon wafer with a Diamond Wire Saw using an artificial neural network[J]. Solar Energy, 2017, 149:285-293.

DOI: 10.1016/j.solener.2017.04.022

[11] Liu X Q, Yu L, Ma Z C, et al. Silicon three-dimensional structures fabricated by femtosecond laser modification with dry etching.[J]. Appl Opt, 2017, 56(8):2157-2161.

DOI: 10.1364/ao.56.002157

[12] Stegemann B, Gad K M, Balamou P, et al. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities[J]. Applied Surface Science, 2017, 395:78-85.

DOI: 10.1016/j.apsusc.2016.06.090

[13] Mcintosh K R, Zin N, Nguyen H T, et al. Optical Evaluation of Silicon Wafers With Rounded Rear Pyramids[J]. IEEE Journal of Photovoltaics, 2017, 7(6):1596-1602.

DOI: 10.1109/jphotov.2017.2754060

[14] Gou X, Li X, Yu J, et al. Influence of crystal defect density of silicon wafers on potential‐induced degradation (PID) in solar cells and modules[J]. Physica Status Solidi, 2017, 214(12):e201700006.

DOI: 10.1002/pssa.201700006

[15] Parashar P K, Sharma R P, Komarala V K. Double-layer antireflection from silver nanoparticle integrated SiO2 layer on silicon wafer: effect of nanoparticle morphology and SiO2 film thickness[J]. Journal of Physics D Applied Physics, 2017, 50(3):035105.

DOI: 10.1088/1361-6463/50/3/035105

[16] Booth J P, Azamoum Y, Sirse N, et al. Absolute atomic chlorine densities in a Cl 2 inductively coupled plasma determined by two-photon laser-induced fluorescence with a new calibration method[J]. Journal of Physics D Applied Physics, 2017, 45(19):195201.

DOI: 10.1088/0022-3727/45/19/195201

[17] Siwulski M, Mleczek M, Rzymski P, et al. Screening the Multi-Element Content of Pleurotus Mushroom Species Using inductively Coupled Plasma Optical Emission Spectrometer (ICP-OES)[J]. Food Analytical Methods, 2017, 10(2):487-496.

DOI: 10.1007/s12161-016-0608-1

[18] GUAN Ning-xin, ZHANG Gui-fen, CAO Kun-wu, et al. Determination of seven elements in aluminum bronze by inductively coupled plasma atomic emission spectrometry[J]. Metallurgical Analysis, 2017, 37(2):40-44.

[19] Drobyshev E J, Solovyev N D, Ivanenko N B, et al. Trace element biomonitoring in hair of school children from a polluted area by sector field inductively coupled plasma mass spectrometry[J]. Journal of Trace Elements in Medicine & Biology Organ of the Society for Minerals & Trace Elements, 2017, 39(Complete):14-20.

DOI: 10.1016/j.jtemb.2016.07.004

[20] Despiau-Pujo E, Chabert P, Bansropun S, et al. Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2017, 28(4):693-701.

DOI: 10.1116/1.3437492