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POSS-Containing Nanocomposite Materials for Next Generation Nanolithography
Abstract:
Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).
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299-302
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January 2007
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© 2007 Trans Tech Publications Ltd. All Rights Reserved
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