POSS-Containing Nanocomposite Materials for Next Generation Nanolithography

Abstract:

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Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

Info:

Periodical:

Solid State Phenomena (Volume 119)

Edited by:

Chang Kyu Rhee

Pages:

299-302

DOI:

10.4028/www.scientific.net/SSP.119.299

Citation:

J. H. Choi et al., "POSS-Containing Nanocomposite Materials for Next Generation Nanolithography", Solid State Phenomena, Vol. 119, pp. 299-302, 2007

Online since:

January 2007

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Price:

$35.00

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