POSS-Containing Nanocomposite Materials for Next Generation Nanolithography
Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).
Chang Kyu Rhee
J. H. Choi et al., "POSS-Containing Nanocomposite Materials for Next Generation Nanolithography", Solid State Phenomena, Vol. 119, pp. 299-302, 2007