The Effect of Nitrogen Partial Pressure on Microstructure of Reaction Bonded Silicon Nitride

Abstract:

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The interaction between gas atmosphere and silicon during reaction bonded silicon nitride(RBSN)process leads to a non-uniform band formation of alpha silicon nitride. The reaction layer, α -Si3N4, was formed near the surface of the sample in the early stage of RBSN. Reactive nitrogen gas was supplied as static state using computer controlled gas delivery system. The formation of α -Si3N4 band near the surface of the sample can be explained thermodynamically, based on the nitrogen partial pressure in the gas mixtures.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

231-234

DOI:

10.4028/www.scientific.net/SSP.121-123.231

Citation:

C. Park et al., "The Effect of Nitrogen Partial Pressure on Microstructure of Reaction Bonded Silicon Nitride", Solid State Phenomena, Vols. 121-123, pp. 231-234, 2007

Online since:

March 2007

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Price:

$35.00

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