Electrical Transport Properties in Self-Assembled Erbium Disilicide Nanowires

Zhi Gang Li; Xin Wei Zhao; Shi Bing Long; Li Hui Zhang; Ming Liu

doi:10.4028/www.scientific.net/SSP.121-123.413

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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Electrical Transport Properties in Self-Assembled...

Electrical Transport Properties in Self-Assembled Erbium Disilicide Nanowires

Abstract:

Long erbium disilicide nanowires were fabricated through laser ablation and annealing process on the Si (001) surface. The ErSi2 nanowires were along the perpendicular Si <110> directions. The average width of nanowires is less than 10nm and the maximum length is more then 10um. The electrical transport properties of the ErSi2 nanowires were measured and a resistivity value of 1.87×10-6Ωm was acquired. These self-assembled Si-based nanowires could be used for further devices applications.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

413-416

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.413

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Online since:

March 2007

Authors:

Zhi Gang Li, Xin Wei Zhao, Shi Bing Long, Li Hui Zhang, Ming Liu

Keywords:

Erbium Disilicide, Nanowire, Self-Assembly

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