Self-Assembled InAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique

Abstract:

InAs lateral quantum dot molecules (QDMs) are grown on (001)-GaAs substrates. The self-assembled QDMs are formed in one continuous molecular beam epitaxial (MBE) growth via a thin-capping-and-regrowth technique. Lateral QDMs, each with 10-12 dots arranged in a specific pattern, are determined by the shapes of the underlying nanopropeller quantum dots (QDs). The nanopropeller QDs in turn are obtained by regrowth on nano-holes which have been previously created by capping the first InAs QD layer grown on (001)-GaAs substrate with a thin GaAs layer. The length of the propeller directly influences the number of QDs in a QDM. By varying the conditions for thin-capping, shorter or longer propellers can be achieved, allowing the number of QDs in each QDM to be controlled.

• Periodical: Solid State Phenomena (Volumes 121-123)
• Pages: 395-400
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.121-123.395
• Online since: March 2007
• Authors: S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow
• Keywords: Molecular Beam Epitaxy, Regrowth Technique, Self-Assembled Quantum Dot Molecules, Thin-Capping

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