The Ballistic Electron Emission Microscopy in the Characterization of Quantum Dots
Ballistic electron emission microscopy (BEEM) is a new method by apply the spatial resolution capabilities of the scanning tunneling microscope (STM) to investigate electron transport properties in the quantum dots. This method requires three terminals: a sharp tip to inject electrons, a conductive layer and a semiconductor substrate. The transport-related properties of the sample can be obtained by using the characteristic of the injected and collected electrons. In this paper proposed a BEEM model for the silicon quantum dots (Si-QDs) on SiO2 layer prepared by LPCVD technique. SiO2 layer was thermally grown on p-type Si (100) wafer in dry O2 atmosphere and a thin gold layer cap used to provide a conductive layer on top of the Si-QDs for the BEEM characterization.
Chunli BAI, Sishen XIE, Xing ZHU
S.D. Hutagalung et al., "The Ballistic Electron Emission Microscopy in the Characterization of Quantum Dots", Solid State Phenomena, Vols. 121-123, pp. 529-532, 2007