Study on Opto-Electronic Integration of Resonant Tunnelling Diodes

Ping Juan Niu; Hai Rong Hu; Hong Wei Liu; Wen Xin Wang; Xun Zhong Shang

doi:10.4028/www.scientific.net/SSP.121-123.533

Paper Titles

Micro-Opto-Mechanical Devices Made of Carbon Nanotubes Arrays
p.517

Ambipolar Transport Behaviors in Fullerene Peapod Transistors
p.521

Device Characteristics of Nanoscale Metal/Insulator Tunnel Transistors in the Ballistic Quantum Transport Regime
p.525

The Ballistic Electron Emission Microscopy in the Characterization of Quantum Dots
p.529

Study on Opto-Electronic Integration of Resonant Tunnelling Diodes
p.533

Quasi-Periodic Coulomb Blockade Oscillations in a Single-Wall Carbon Nanotube Bundle
p.537

Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy
p.541

Gate-Controlled Tomonaga-Luttinger Liquid and Atomic-Like Behaviors in Peapod Quantum Dots
p.545

Small-Signal Circuit Elements of MIS-Type Nanostructures
p.549

HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Study on Opto-Electronic Integration of Resonant...

Study on Opto-Electronic Integration of Resonant Tunnelling Diodes

Abstract:

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.533

Citation:

Cite this paper

Online since:

March 2007

Authors:

Ping Juan Niu, Hai Rong Hu, Hong Wei Liu, Wen Xin Wang, Xun Zhong Shang

Keywords:

Heterojunction Phototransistor Transistor (HPT), Monolithic Integration, Negative Resistance Device, Resonant Tunnelling Diode (RTD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] E.R. Brown, J.R. Soderstron, C.D. Parker, L.J. Mahoney, K. Molvar, and T.C. McGill: Appl. Phys. Lett. Vol. 58(1991), p.2291.

Google Scholar

[2] D.H. Chow and J.N. Schulman: Appl. Phys. Lett. Vol. 61(1992), p.1685.

Google Scholar

[3] W.L. Guo, P.J. Niu, H.L. Liang and S.L. Zhang: IEEE 2001 6 th International Conference on Solid-State and Integrated Circuit Technology proceedings(2001), p.1453.

Google Scholar

[4] S. Noda, Y. Kobayashi, T. Takayama, K. Shibata and A. Sasaki: IEEE Journal of Quantum Electronics, Vol. 28(1992), p.2714.

Google Scholar

[5] W. Zhou, S. Pradhan, P. Bhattacharya, W.K. Liu and D. Lubshev: IEEE Photonics Technology Letters, Vol. 13( 2001), p.1218.

Google Scholar

[6] S. Chandrasekhar, Leda M. Lunardi, A.H. Gnauck, R.A. Hamm and J.G. Qua: IEEE Photonics technology Letters, Vol. 5 (1993), p.1316.

Google Scholar

[7] J.K. Twynam and R.C. Woods: Inst. Elec. Eng. Proc. Vol. 135(1988), p.52.

Google Scholar

[8] J. N. Schulman, H. J. De Los Santos: IEEE Electron Device Letters, Vol. 17(1996), p.220. VCE: 0. 5V/div Fig. 3 The common emitter characteristics of RTD/HPT monolithic integrated logic unit cell Pin=1μW, 2μW, 3μW Ic: 0. 5mA/div.

Google Scholar