Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering

Abstract:

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Single phase monoclinic vanadium dioxide (VO2) films were successfully grown on sapphire (001) substrate by means of an inductively coupled plasma (ICP)-assisted sputtering with an internal coil. In x-ray diffraction patterns, we observed reflections originating from monoclinic VO2 with a main peak at 2θ = 39.77° corresponding to VO2 (020) for films on sapphire (001) substrates. The VO2 films exhibited metal-insulater transition (MIT) at temperatures around 65°C with three orders of change in resistivity. A simple device of VO2 film on sapphire (001) substrate having aluminum electrodes as ohmic contacts with gap separation of 1.0 mm showed current jump at an applied voltage of 48 V. The current jumped from 7 mA to 200 mA which was a limited value of voltage source.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

703-706

DOI:

10.4028/www.scientific.net/SSP.124-126.703

Citation:

K. Okimura et al., "Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering", Solid State Phenomena, Vols. 124-126, pp. 703-706, 2007

Online since:

June 2007

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$35.00

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