Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells: Phosphorous Doping and Contact Opening Process

Sang Wook Park; Eun Chel Cho; Jae Hee Yu; Dea Won Kim

doi:10.4028/www.scientific.net/SSP.124-126.923

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Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells: Phosphorous Doping and Contact Opening Process

Abstract:

In this work, we report on the last investigation of POP (selective Phosphorous doping and contact Opening Process) in crystalline silicon solar cells. For the industrial solar cells, it must be very highly doped to decrease the high-contact resistance and not very shallow so that it is not perforated during paste firing, which would short-circuit the junction. We made improvement involves making separate diffusions for the different regions since the requirements are so different: a heavily doped and thick region under the contacts, a thin and lowly doped region under the passivating layer. Furthermore we opened the metal contact area to make a narrow grid lines simultaneously. As a result we could increase fill factor and reduce contact resistance by industrial process.

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Periodical:

Solid State Phenomena (Volumes 124-126)

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923-926

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.923

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Online since:

June 2007

Authors:

Sang Wook Park, Eun Chel Cho, Jae Hee Yu, Dea Won Kim

Keywords:

Contact Resistance, Selective Emitter, Solar Cell

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References

[1] A. Goetzberger, J. Luther, G. Willeke, Solar cells: past present, future, Solar Energy Materials & Solar Cells, Vol. 74 (2002), p.1.

DOI: 10.1016/s0927-0248(02)00042-9

Google Scholar

[2] E.J. Lee, D.S. Kim, S.H. Lee, Ni/Cu metallization for low-cost high-efficiency PERC cells, Solar Energy Materials & Solar Cells, Vol. 74 (2002), p.65.

DOI: 10.1016/s0927-0248(02)00049-1

Google Scholar

[3] M. A. Green, Silicon Solar Cells: Advanced Principles and Practice. Sydney, Australia: Bridge Printery, (1995).

Google Scholar

[4] M. A. Green, Jianhua Zhao, Aihua Wang, and Stuart R. Wenham, Very high efficiency silicon solar cells science and technology, IEEE Transactions on Devices, Vol. 46(10) (1999).

DOI: 10.1109/16.791982

Google Scholar

[5] D. L. Meier and D. K. Schroder, Contact resistance: Its Measurement and Relative Importance to Power Loss in a Solar Cell, IEEE Transactions on Electron Devices, Vol. ED-31(5) (1984), p.647. �.

DOI: 10.1109/t-ed.1984.21584

Google Scholar