A series of amorphous hydrogenated carbon layers doped with nitrogen (a-C:N:H) was deposited on Si (001). The synthesis was performed from gaseous N2/CH4 mixture using PE CVD (RF CVD technique; 13,56 MHz). An influence of the processing conditions on layer-growth rate was analysed. Thickness of the layers deposited during 1 hour at various temperatures, pressures and RF powers were taken as a basis. It has been proved that the substrate temperature is a key parameter for the layer formation. Temperature rise results in the deposition rate decrease. This unfavourable effect may be reduced by application of increased gas pressure and/or higher plasma RF generator power. At optimal conditions (46 oC; 0,8 Tr; 60 W) the deposition rate reaches up to 600 nm/hour. FT-IR spectra of the layers were measured within 1250 - 4000 cm-1 and discussed with regard to the atomic structure. The intensities of the characteristic absorption bands were compared. The results show that the layers have various N/C ratios according to the applied processing conditions.