Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism

Abstract:

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We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

Info:

Periodical:

Solid State Phenomena (Volumes 152-153)

Edited by:

N. Perov

Pages:

283-286

DOI:

10.4028/www.scientific.net/SSP.152-153.283

Citation:

V.A. Kulbachinskii and L. Shchurova, "Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism", Solid State Phenomena, Vols. 152-153, pp. 283-286, 2009

Online since:

April 2009

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$35.00

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