Novel Ferromagnetic Mn-Doped ZnSiAs2 Chalcopyrite with Curie Point Exceeded Room Temperature

Abstract:

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Based on Mn-doped chalcopyrite ZnSiAs2 the new dilute magnetic semiconductor with p-type conductivity was produced. The Curie temperature behavior of the produced semiconductor is distinctly dependent on the Mn concentration: 325 K for 1 wt.% and 337 K for 2 wt.% of Mn, consequently. Magnetization, electrical resistance, magnetic resistance and Hall effect of mentioned compositions were studied. Temperature dependence of magnetization M(T) have complicate behavior. For T  15 K the M(T) dependence is characteristic for superparamagnetic and at T > 15 K magnetization is sum of magnetizations of ensemble of superparamagnetic clusters and ferromagnetic phase contained frustration regions.

Info:

Periodical:

Solid State Phenomena (Volumes 152-153)

Edited by:

N. Perov

Pages:

311-314

DOI:

10.4028/www.scientific.net/SSP.152-153.311

Citation:

S.F. Marenkin et al., "Novel Ferromagnetic Mn-Doped ZnSiAs2 Chalcopyrite with Curie Point Exceeded Room Temperature", Solid State Phenomena, Vols. 152-153, pp. 311-314, 2009

Online since:

April 2009

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$35.00

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