Novel Ferromagnetic Mn-Doped ZnSiAs2 Chalcopyrite with Curie Point Exceeded Room Temperature
Based on Mn-doped chalcopyrite ZnSiAs2 the new dilute magnetic semiconductor with p-type conductivity was produced. The Curie temperature behavior of the produced semiconductor is distinctly dependent on the Mn concentration: 325 K for 1 wt.% and 337 K for 2 wt.% of Mn, consequently. Magnetization, electrical resistance, magnetic resistance and Hall effect of mentioned compositions were studied. Temperature dependence of magnetization M(T) have complicate behavior. For T 15 K the M(T) dependence is characteristic for superparamagnetic and at T > 15 K magnetization is sum of magnetizations of ensemble of superparamagnetic clusters and ferromagnetic phase contained frustration regions.
S.F. Marenkin et al., "Novel Ferromagnetic Mn-Doped ZnSiAs2 Chalcopyrite with Curie Point Exceeded Room Temperature", Solid State Phenomena, Vols. 152-153, pp. 311-314, 2009