Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling
This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.
S. Harnsoongnoen et al., "Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling", Solid State Phenomena, Vols. 152-153, pp. 399-402, 2009