Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling

Abstract:

This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.

• Periodical: Solid State Phenomena (Volumes 152-153)
• Pages: 399-402
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.152-153.399
• Online since: April 2009
• Authors: S. Harnsoongnoen, Chiranut Sa-Ngiamsak, Apirat Siritaratiwat
• Keywords: Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer (CCTMI), Finite Element, Normal Bottom Contact (NBC), Phase Change Memory (PCM)

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