Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling

Abstract:

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This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.

Info:

Periodical:

Solid State Phenomena (Volumes 152-153)

Edited by:

N. Perov

Pages:

399-402

DOI:

10.4028/www.scientific.net/SSP.152-153.399

Citation:

S. Harnsoongnoen et al., "Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling", Solid State Phenomena, Vols. 152-153, pp. 399-402, 2009

Online since:

April 2009

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