Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

Seiichi Miyazaki; Mitsuhisa Ikeda; Katsunori Makihara; K. Shimanoe; R. Matsumoto

doi:10.4028/www.scientific.net/SSP.154.95

Paper Titles

Shape Memory Assemblies Using Ultrasonic Welding
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Simultaneous Growth of MWCNTs at Different Temperatures in a Variable Gradient Furnace
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Suppressed Field Emission Screening Effect and Electric Field Simulation of Carbon Nanotube-Based Triode Field Emitters
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FePt Nanorods and Nanowires for Novel Ferrofluids
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Formation of Metal Silicide Nanodots on Ultrathin SiO₂ for Floating Gate Application
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Nano-Silicon Sol-Gel Film Refraction Index Modulation with Femtosecond Laser
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Urethane Magnetorheological Elastomers - Manufacturing, Microstructure and Properties
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Experimental Validation of Numerical Methods of MRE Simulations
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Elastomers Containing Fillers with Magnetic Properties
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HomeSolid State PhenomenaSolid State Phenomena Vol. 154Formation of Metal Silicide Nanodots on Ultrathin...

Formation of Metal Silicide Nanodots on Ultrathin SiO₂ for Floating Gate Application

Abstract:

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.