Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au
The optical anisotropy properties of rhenium disulphide (ReS2) and Au-doped rhenium disulphide (ReS2:Au) have been investigated by polarization-dependent photoluminescence (PL). Because the excitonic transitions show strong polarization dependences in the near-infrared region, we used polarization-dependent PL measurements in the range between 0° and 180° to characterize the unique polarization property of ReS2 and ReS2:Au, and identify the origin of the excitonic transitions. It was observed that the variation in the amplitude of PL excitonic transitions with different polarization characteristics follows the Malus rule. In comparison with the undoped ReS2, the PL spectra of Au-doped sample show not only the main excitonic transitions near the direct band edge but also some extra transitions owing to the doping effects.
J.-L. Bobet, B. Chevalier and D. Fruchart
D. Y. Lin et al., "Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au", Solid State Phenomena, Vol. 170, pp. 135-138, 2011