Microstructural Property of Silicon Thin Films Deposited on Nanodiamonds Related to QALD Growth Condition

Abstract:

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Quasi atomic layer deposition method has been successfully used to coat detonation nanodiamonds with ultrathin silicon film from decomposition of gaseous monosilane. Transmission electron microscopy observation indicates a continuous silicon coating could be obtained on every individual particle of nanodiamonds. The changes in the microstructural property of silicon thin films deposited at the temperatures of 400, 450, 500, 550, and 600 °C have been characterized by Raman spectroscopy, X-ray diffraction and Energy dispersive spectroscopy techniques. The results show the phase transition of as-deposited silicon from a crystalline to an amorphous then to a crystalline phase with the temperature increase.

Info:

Periodical:

Solid State Phenomena (Volume 175)

Edited by:

Xipeng Xu

Pages:

226-230

DOI:

10.4028/www.scientific.net/SSP.175.226

Citation:

J. Lu and Y. H. Wang, "Microstructural Property of Silicon Thin Films Deposited on Nanodiamonds Related to QALD Growth Condition", Solid State Phenomena, Vol. 175, pp. 226-230, 2011

Online since:

June 2011

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$35.00

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