Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi2Te3 Films

Arina Arina; Fan Shermin Chow Hui; Banu Abdul Bari Shamira; Ai Lin Chia; Ye Ko San; Samuel Khong; Jonathan Sim; Santhiagu Ezhilvalavan; Jan Ma; Heng Hui Hoon

doi:10.4028/www.scientific.net/SSP.185.94

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Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi₂Te₃ Films
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Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi₂Te₃ Films

Abstract:

Thermoelectric is an ever evolving field that serves many critical needs (cooling and power generation) in the industry. The key objective of this work is to fabricate Bismuth Telluride (Bi₂Te₃) thin-films by varying the various process parameters using a radio-frequency (RF) magnetron sputtering disposition technique. Characterization methods such as four point probe resistivity, surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), Seebeck coefficient and thermal diffusivity are performed on the N and P-type Bi₂Te₃ films. The samples are analysed for their electrical properties in relation to the evolved microstructures, for how the process parameters of sputtering and annealing affect these changes. The results demonstrate that N-Type film (S2) processed using sputtering parameters of 7mT, 100W, 50sccm of argon flow under room temperature for 30mins with no annealing and the P-Type film processed using sputtering parameters of 7mT, 100W, 60sccm under room temperature for 30mins with institute annealing at 200°C for 2h exhibit desirable thermoelectric properties suitable for cooling application in microelectronic and optoelectronic devices, optimizing their performance and reliability.