Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors

Y.A. Danilov; B.N. Zvonkov; Alexei V. Kudrin; O.V. Vikhrova; S.M. Plankina; V.S. Dunaev; A.V. Nezhdanov; Y.N. Drozdov

doi:10.4028/www.scientific.net/SSP.190.109

Paper Titles

Exchange Bias in Co/FeMn and Co/IrMn Structures Induced by Deposition in Presence of Magnetic Field
p.93

Suppression of Ferromagnetism in Eu_xCa_1-xB₆
p.97

Spin-Polarized Current in the Magnetic Nano Wire
p.101

Electrical Resistance of Sm_0.25Mn_0.75S Spin Glass
p.105

Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors
p.109

Ab Initio Study of Electronic and Magneto-Optical Properties of InSb:Mn and InAs:Mn
p.113

Spin Hall Effect Induced by Sound
p.117

Magnetic Structure of La_0.54Ho_0.11Sr_0.35Mn_1-XCu_xO₃ Manganites
p.121

Response of a Manganite-Based Magnetic Tunnel Structure to Microwave Radiation
p.125

HomeSolid State PhenomenaSolid State Phenomena Vol. 190Room-Temperature Ferromagnetism in (III,Mn)Sb...

Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors

Abstract:

t is reported about fabrication by laser deposition in a gaseous environment of epitaxial layers of ferromagnetic semiconductors GaMnSb and InMnSb. Investigations of x-ray diffraction and Raman scattering showed reasonably good crystal quality of GaMnSb and InMnSb layers. Magnetic properties were investigated by magneto-optical transversal Kerr effect and Hall effect. It is established, that GaMnSb layers are ferromagnetic at room temperature. In contrast, InMnSb samples demonstrate the ferromagnetic properties only at low temperatures (< 70 K).

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 190)

Pages:

109-112

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.109

Citation:

Cite this paper

Online since:

June 2012

Authors:

Y.A. Danilov, B.N. Zvonkov, Alexei V. Kudrin, O.V. Vikhrova, S.M. Plankina, V.S. Dunaev, A.V. Nezhdanov, Y.N. Drozdov

Keywords:

Anomalous Hall Effect, Epitaxial Growth, Ferromagnetic III-V Semiconductors, Laser Deposition, Raman Scattering, Transversal Kerr Effect, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S.A. Wolf, A.Y. Chtchelkanova, D.M. Treger, Spintronics- retrospective and perspective, IBM J. Res. & Dev., 50(2006), 101-110.

DOI: 10.1147/rd.501.0101

Google Scholar

[2] H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, (Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs, Appl. Phys. Lett., 69(1996), 363-365.

DOI: 10.1063/1.118061

Google Scholar

[2] B.N. Zvonkov, O.V. Vikhrova, Yu.A. Danilov, P.B. Demina, M.V. Dorokhin, V.V. Podol'skiĭ, E.S. Demidov, Yu.N. Drozdov, and M.V. Sapozhnikov, Using laser sputtering to obtain semiconductor nanoheterostructures, Journal of Optical Technology, 75(2008).

DOI: 10.1364/jot.75.000389

Google Scholar

[3] J.E. Maslar, W.S. Hurst, and C.A. Wang, Spectroscopic determination of electron concentration in n-type GaSb, Journal of Applied Physics, 104(2008), 103521.

DOI: 10.1063/1.3021159

Google Scholar

[4] T.R. Yang, Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial Films, Physica B, 284-288(2000), 1189-1190.

DOI: 10.1016/s0921-4526(99)02622-8

Google Scholar