Response of a Manganite-Based Magnetic Tunnel Structure to Microwave Radiation

Nikita V. Volkov; M.V. Rautskiy; E.V. Eremin; G.S. Patrin; P.D. Kim; Chan Gyu Lee

doi:10.4028/www.scientific.net/SSP.190.125

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HomeSolid State PhenomenaSolid State Phenomena Vol. 190Response of a Manganite-Based Magnetic Tunnel...

Response of a Manganite-Based Magnetic Tunnel Structure to Microwave Radiation

Abstract:

We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spin-polarized current and magnetization dynamics in the magnetic tunnel structure.

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Periodical:

Solid State Phenomena (Volume 190)

Pages:

125-128

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.125

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Online since:

June 2012

Authors:

Nikita V. Volkov, M.V. Rautskiy, E.V. Eremin, G.S. Patrin, P.D. Kim, Chan Gyu Lee

Keywords:

Magnetic Tunnel Structure, Microwave Detection Effect, Spintronics

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