Electro-Assisted Magnetization Switching in Asymmetric Spin-Valves

V. Sohatsky

doi:10.4028/www.scientific.net/SSP.190.133

Paper Titles

Spin Hall Effect Induced by Sound
p.117

Magnetic Structure of La_0.54Ho_0.11Sr_0.35Mn_1-XCu_xO₃ Manganites
p.121

Response of a Manganite-Based Magnetic Tunnel Structure to Microwave Radiation
p.125

Current Induced Spin Injection in Si-MOSFET
p.129

Electro-Assisted Magnetization Switching in Asymmetric Spin-Valves
p.133

Magnetoresitive Properties of Gd/Ti Multilayers
p.137

Electronic and Spin Structure of Metal Phthalocyanines
p.141

Asymmetric Voltage Behavior of the Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions
p.145

The Behavior of the Ferromagnet/Wide-Band Polymer Heterostructure in Magnetic Field
p.149

HomeSolid State PhenomenaSolid State Phenomena Vol. 190Electro-Assisted Magnetization Switching in...

Electro-Assisted Magnetization Switching in Asymmetric Spin-Valves

Abstract:

The magnetic and electric properties of Fe/Cu/Fe sandwiches deposited on Si were studied in order to improve the efficiency of such a model of spin transistor with a spin-valve. Evaluations of the energy balance and measurements of current dependence on voltage and applied magnetic field confirmed the possibility of amplification increasing in case of additional effect of current on remagnetization.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 190)

Pages:

133-136

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.133

Citation:

Cite this paper

Online since:

June 2012

Authors:

V. Sohatsky

Keywords:

Magnetization, Spin Transistor, Spin-Valve

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M. Johnson. The bipolar spin transistor. JMMM. 140-144 (1995) 21-24.

Google Scholar

[2] J. C. Lodder, D. J. Monsma, R. Vlutters, and T. Shimatsu. The spin-valve transistor: technologies and progress. JMMM. 198-199 (1999) 119-124.

DOI: 10.1016/s0304-8853(98)01241-4

Google Scholar

[3] Y. Shuto et al. A New Spin-Functional Metal–Oxide–SC Field-Effect Transistor Based on MTJ Technology: Pseudo-Spin-MOSFET. Appl. Phys. Express ( 2010) 3. - 013003.

DOI: 10.1143/apex.3.013003

Google Scholar

[4] K. Konishi et al. Current-Field Driven Spin Transistor. Appl. Phys. Expr. 2 (2009) 063004.

Google Scholar