Current Induced Spin Injection in Si-MOSFET

Abstract:

Longitudinal resistivity in strong parallel magnetic fields up to B = 14 Tesla was measured in Si-MOSFET with a narrow slot (90nm) in the upper metallic gate that allows to apply different gate voltage across the slot and, therefore, to control the electron density n₁ and n₂ in two parts of the sample independently. The experimental scheme allows us to pass through the source-drain channel relatively large DC current (I_DC), while the dynamic resistance was measured using a standard lock-in technique with small AC current. It was shown that the sample resistance is asymmetric with respect to the direction of DC current. The asymmetry increases with increase of magnetic field, DC current, and difference between n₁ and n₂. Results are interpreted in terms of a current-induced spin accumulation or depletion near the slot, as described by a spin drift-diffusion equation. The effect on the sample resistance is due to the positive magnetoresistance of Si-MOSFETs in parallel magnetic fields.

• Periodical: Solid State Phenomena (Volume 190)
• Pages: 129-132
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.190.129
• Online since: June 2012
• Authors: I. Shlimak, A. Butenko, D.I. Golosov, K.J. Friedland, S.V. Kravchenko
• Keywords: Magnetoresistance, Spin Injection, Two-Dimensional Conductivity

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