"γ-Fe Problem" and Epitaxial Growth of Fe on Cu(001)

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Abstract:

We have observed the formation of a thin buffer layer on the Fe/Cu interface at a temperature of 520 K. Mössbauer spectroscopy and magnetic studies reveal that the residual gases in the chamber (especially oxygen) play an important role in the ultra-thin interlayer formation. It was shown that the Cu2O buffer layer does not change the Pitsh orientation relationships during epitaxial growth of α-Fe (110) on Cu (001). Our analysis of the experimental results contradicts pseudomorphic growth and formation of γ-Fe on Cu (001).

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Solid State Phenomena (Volume 190)

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502-505

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June 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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