Magnetoimpedance of FeNi Thin Film Meanders

Stanislav O. Volchkov; A.A. Yuvchenko; V.N. Lepalovskij; Eduardo Fernandez; G.V. Kurlyandskaya

doi:10.4028/www.scientific.net/SSP.190.609

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HomeSolid State PhenomenaSolid State Phenomena Vol. 190Magnetoimpedance of FeNi Thin Film Meanders

Magnetoimpedance of FeNi Thin Film Meanders

Abstract:

The role of the geometrical parameters was studied for thin film based [FeNi (100 nm)/Cu (3 nm)]₄/FeNi (100 nm)/Cu (500 nm)/[FeNi (100 nm)/Cu (3 nm)]₄/FeNi (100 nm) magnetoimpedance elements with open magnetic flux prepared by lithography technique. The maximum magnetoimpedance sensitivity of 17 %/Oe was obtained for meander shaped sample, exceeding the value of the maximum sensitivity of 5 %/Oe of the single stripe sample. The highest values of the magnetoimpedance were observed for relatively low frequency of order of 50 MHz convenient for technological applications. Both developed technology and obtained results can be useful for optimization of the design of miniaturized detectors of small magnetic field.

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Periodical:

Solid State Phenomena (Volume 190)

Pages:

609-612

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.609

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Online since:

June 2012

Authors:

Stanislav O. Volchkov, A.A. Yuvchenko, V.N. Lepalovskij, Eduardo Fernandez, G.V. Kurlyandskaya

Keywords:

Lithography, Magnetic Field Sensor, Magnetoimpedance, Meander Structure, NiFe Films

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References

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