Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

M.V. Dorokhin; Y.A. Danilov; Alexei V. Kudrin; E.I. Malysheva; M.M. Prokof’eva; B.N. Zvonkov

doi:10.4028/www.scientific.net/SSP.190.89

Paper Titles

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Low-Doped La_0.54Ho_0.11Sr_0.35Mn_1-XV_xO₃Manganites: Vanadium Influence on Transport Phenomena and Magnetic Properties
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Exchange Bias in Co/FeMn and Co/IrMn Structures Induced by Deposition in Presence of Magnetic Field
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Suppression of Ferromagnetism in Eu_xCa_1-xB₆
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Spin-Polarized Current in the Magnetic Nano Wire
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HomeSolid State PhenomenaSolid State Phenomena Vol. 190Fabrication of InGaAs/GaAs Light-Emitting Diodes...

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

Abstract:

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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Solid State Phenomena (Volume 190)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.89

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Online since:

June 2012

Authors:

M.V. Dorokhin, Y.A. Danilov, Alexei V. Kudrin, E.I. Malysheva, M.M. Prokof’eva, B.N. Zvonkov

Keywords:

Electroluminescence, Ferromagnetic Semiconductor, Light Emitting Diode (LED)

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