Growth, Optical Adsorption and Resistivity of (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 Single Crystals

Inna A. Ivashchenko; Volodumur V. Halyan; Irina V. Danylyuk; Volodumur Z. Pankevuch; Georgij Y. Davydyuk; Ivan D. Olekseyuk

doi:10.4028/www.scientific.net/SSP.200.50

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Growth, Optical Adsorption and Resistivity of (Ga_0.6In_0.4)₂Se₃ and (Ga_0.594In_0.396Er_0.01)₂Se₃ Single Crystals

Abstract:

The phase diagram of the Ga₂Se₃–In₂Se₃ system was investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ₂ phase with the compositions (Ga_0.6In_0.4)₂Se₃ and (Ga_0.594In_0.396Er_0.01)₂Se₃ were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0. 01 eV. The resistance of the single crystals of (Ga_0.6In_0.4)₂Se₃ (R=500 MΩ) and (Ga_0.594In_0.396Er_0.01)₂Se₃ (R=210 MΩ) was measured.

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Solid State Phenomena (Volume 200)

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50-53

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.200.50

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April 2013

Authors:

Inna A. Ivashchenko, Volodumur V. Halyan, Irina V. Danylyuk, Volodumur Z. Pankevuch, Georgij Y. Davydyuk, Ivan D. Olekseyuk

Keywords:

Absorption Spectra, Band Gap, Phase Diagram, Resistance, Semiconductor, Single Crystal

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