Electrical Transport Features in Fe3O4/SiO2/n-Si Hybrid Structures

Viktor A. Vikulov; Artem A. Dimitriev; Vyacheslav V. Balashev; Tatiana A. Pisarenko; Andrey M. Maslov; Vladimir V. Korobtsov

doi:10.4028/www.scientific.net/SSP.213.56

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Adsorption Configuration of CH₄ on Fe/SiO₂ Surface: First-Principles Calculations
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The Influence of Seed Layer on Growth of Magnetite Films on the SiO₂/Si (001) Surface
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Electrical Transport Features in Fe₃O₄/SiO₂/n-Si Hybrid Structures
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Multi-Walled Carbon Nanotubes Synthesized by Methane Pyrolysis: Structure and Magnetic Properties
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Sodium Doping of Bi/Si(111) Ultra-Thin Films
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HomeSolid State PhenomenaSolid State Phenomena Vol. 213Electrical Transport Features in Fe3O4/SiO2/n-Si...

Electrical Transport Features in Fe₃O₄/SiO₂/n-Si Hybrid Structures

Abstract:

The temperature dependencies of the resistivity of planar structures Fe₃O₄/SiO₂/n-Si, with Fe₃O₄ films of different thicknesses, were investigated. In the temperature range below 125 K, an anomalous decrease in the resistivity was observed. This effect is explained by switching of the conductance channel from the Fe₃O₄film to the inversion layer of Si substrate due to the field-assisted tunneling of carriers through the semi-insulating Fe₃O₄/SiO₂ double insulator. Confirmation was obtained by the current-voltage characteristics measured at 80 K. It was found that current-voltage characteristics are S-shaped and correspond to the MIS switch diode.

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Solid State Phenomena (Volume 213)

Pages:

56-59

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.213.56

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Online since:

March 2014

Authors:

Viktor A. Vikulov*, Artem A. Dimitriev, Vyacheslav V. Balashev, Tatiana A. Pisarenko, Andrey M. Maslov, Vladimir V. Korobtsov

Keywords:

Conductance Channel, Hybrid Structure, Magnetite, Thin Film

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